PART |
Description |
Maker |
CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM MoBL2 4-Mb (256K x 16) Static RAM MoBL® 4-Mbit (256K x 16) Static RAM 5V, 3.3V, ISR High-Performance CPLDs Licorice Board (CY22150 Candy Board) EEPROM MoBL® 4-Mbit (512K x 8) Static RAM EEPROM MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM MoBL® 2-Mbit (128K x 16) Static RAM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc. 3M Company
|
UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
CY62137FV18LL-55BVXI CY62137FV18LL-55BVXIT |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY62136ESL-45ZSXIT |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY7C1019DV33-10BVXI CY7C1019DV33-10BVXIT CY7C1019D |
1-Mbit (128 K 8) Static RAM
|
Cypress
|
CY62136FV30 CY62136FV30LL-45ZSXA |
2-Mbit (128 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
CY62137EV30 CY62137EV30-45LL CY62137EV30LL-45BVXI |
2-Mbit (128 K x 16) Static RAM Automatic power-down when deselected
|
Cypress Semiconductor
|
CY7C1019CV33-10ZXAT |
1-Mbit (128 K × 8) Static RAM Center Power/Ground Pinout
|
Cypress Semiconductor
|
CY7C1019D-10ZSXI CY7C1019D-10VXI |
1-Mbit (128 K × 8) Static RAM CMOS for optimum speed/power
|
Cypress Semiconductor
|
AM42DL16X2D |
16 Mbit (2 M x 8-Bit/1 M x 16-Bit) CMOS and 2 Mbit (128 K x 16-Bit) Static RAM (Preliminary) From old datasheet system
|
AMD Inc
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|